generated 11/02/2015 - b2f2d8a2-dfbf-4ed9-b0d5-c6597c39d97e kemet part number: T540B336M010AH6610 (04051-027a) capacitor, tantalum, 33 uf, 3528, +/-20% tol, 10 vdc (85c), failure rate=a dimensions (mm) symbol dimension tolerance l 3.5 +/-0.2 w 2.8 +/-0.2 h 1.9 +/-0.1 f 2.2 +/-0.1 s 0.8 +/-0.3 b 0.4 +/-0.15 x 0.1 +/-0.1 p 0.5 ref r 1 ref t 0.13 ref a 1.1 min g 1.8 ref e 2.2 ref notes: -in polarity stripe, at kemet's option, type may be indicated: no symbol = standard (or low leakage) mno2 tantalum chip, o = lowesr t494, r = low esr t495, f = fused t496, ht = 150c rated t498 (or b45196p, b45198p), h = 175c rated t499, m = multiple anode general information supplier: kemet application: military cots/low esr sub application: (noncombustiblecathode) part type description: smd, polymer, molded, cots construction: standard chip-polymer body type: smd chip termination: solder coated footprint: 3528 weight: 98.3 mg rohs: no specifications capacitance: 33 uf tolerance: +/-20% voltage: 10 vdc (85c) voltage: 6.7 vdc (125c) temperature range: -55/+125c testing: 10 cycles surge current testing at +25c +/-5c after voltage aging current/ripple current: 1260 ma (100khz 45c) resistance/esr: 80 mohms (100khz 25c) failure rate: a leakage current: 33 ua dissipation factor: 8% packaging specifications package kind: t&r package size: 7 in/180 mm package quantity: 2000 ? 2006-2015 intellidata.net statements of suitability for certain applications are based on our knowledge of typical operating conditions for such applications, but are not intended to constitute - and we specifically disclaim - any warranty concerning suitability for a specific customer application or use. this information is intended for use only by customers who have the requisite experience and capability to determine the correct products for their application. any technical advice inferred from this information or otherwise provided by us with reference to the use of our products is given gratis, and we assume no obligation or liability for the advice given or results obtained.
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